近日，东南大学崔铁军团队研究了基于欺骗型等离激元斯格明子的深亚波长级片上微波振荡器。相关论文发表在2026年1月19日出版的《国家科学评论》杂志上。

探索极端电磁尺度下的波-物质相互作用一直是跨学科研究的前沿课题，但实现深亚波长场局域化始终是个持久挑战。

研究组基于0.18微米互补金属氧化物半导体（CMOS）工艺，研制出一种电学尺寸为λ₀/865（λ₀为工作波长）、模式体积达2.97×10^-11 λ₀³的片上微波振荡器。其物理机制源于采用方形螺旋金属线实现的欺骗型等离激元斯格明子谐振器，该结构同时作为电磁信号生成的频率选择器与储能元件。

研究组提出了一种强耦合激发结构，可将电磁能量高效聚集至深亚波长谐振结构，并采用互补交叉耦合对来补偿因极端能量集中产生的高材料损耗。这项工作为在超深亚波长尺度上将斯格明子谐振集成至CMOS芯片开辟了新路径，对微型化集成电路与系统的发展具有重要前景。

附：英文原文

Title: On-chip microwave oscillator in deep-subwavelength scale based on spoof plasmonic skyrmions

Author: Wang, Wan Zhu, Liu, Yu, Zhang, Xuanru, Gao, Zhi Lin, Tang, Xu Sheng, Cui, Tie Jun

Issue&Volume: 2026-01-19

Abstract: Exploring wave-matter interactions at extreme electromagnetic (EM) scales has long been a focal topic in multidisciplinary research, but deep-subwavelength field localization remains a persistent challenge. Here, we demonstrate an on-chip microwave oscillator with an electrical size of λ0/865 (λ0 is the operating wavelength) and a mode volume of 2.97 × 1011  λ03 using the 0.18 μm complementary metal-oxide-semiconductor (CMOS) process. The physical insight is based on a spoof plasmonic skyrmion resonator realized by square spiral metal lines, which functions as a frequency selector and an energy storage element simultaneously for EM signal generation. A strongly-coupled excitation structure is proposed to efficiently concentrate EM energy into the deep-subwavelength resonance structure, and a complementary cross-coupled pair is employed to compensate for the high material loss resulting from the extreme energy concentration. This work paves the way for integrating the skyrmion resonances into the CMOS chips in extremely deep-subwavelength scale, and holds great promise for the miniaturized integrated circuits and systems.

DOI: 10.1093/nsr/nwag028

Source: https://academic.oup.com/nsr/advance-article/doi/10.1093/nsr/nwag028/8429801searchresult=1