中国科学院长春光学精密机械物理研究所黎大兵团队研究了多态光电应用中具有可调谐光致发光的纯相铁电量子阱。2025年6月30日出版的《光：科学与应用》杂志发表了这项成果。

准二维（准2D）金属卤化物钙钛矿（MHP）铁电体具有自发极化和半导体特性，有望在光存储和存储计算等应用中实现功能性光铁电体。然而，典型的准二维钙钛矿薄膜包含多个随机宽度分布的量子阱，这会降低光电性能和自发极化。

研究组通过引入无机盐MnBr₂引入了具有均匀阱宽的相纯量子阱，有效地控制了结晶动力学并限制了高n相的成核，从而生产出高质量的薄膜。所得（BA）₂CsPb₂Br₇（BA = C₄H₉NH₃）薄膜表现出铁电滞后行为、清晰的平面内铁电畴切换和88.7%的高光致发光量子效率（PLQE）。

值得注意的是，研究组在施加电场的情况下观察到这种铁电MHP薄膜中Mn²⁺的非易失性、可逆的原位光致发光（PL）调制，这归因于铁电极化取向的晶格畸变。这些发现使得开发一种简单的系统成为可能，该系统包括氮化镓（GaN）发光二极管（LED）和铁电薄膜，以实现多态信号编码和逻辑与门。这项工作推进了高效铁电MHP薄膜的制备，并突出了它们在先进光电应用中的潜力。

附：英文原文

Title: Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications

Author: Sun, Rui, Jia, Yuping, Lai, Bo, Shi, Zhiming, Liu, Mingrui, Yu, Weili, Jiang, Ke, Zhang, Shanli, Lv, Shunpeng, Chen, Yang, Sun, Xiaojuan, Li, Dabing

Issue&Volume: 2025-06-30

Abstract: Quasi-two-dimensional (quasi-2D) metal halide perovskite (MHP) ferroelectrics, characterized by spontaneous polarization and semiconducting properties, hold promise for functional photoferroelectrics in applications such as optical storage and in-memory computing. However, typical quasi-2D perovskite films contain multiple quantum wells with random width distribution, which degrade optoelectronic properties and spontaneous polarization. Here, we introduce phase-pure quantum wells with uniform well width by incorporating the inorganic salt MnBr2, which effectively controls crystallization kinetics and restricts the nucleation of high n-phases, producing high-quality films. The resulting (BA)2CsPb2Br7 (BA=C4H9NH3) film demonstrates ferroelectric hysteresis behavior, clear in-plane ferroelectric domain switching, and a high photoluminescence quantum efficiency (PLQE) of 88.7%. Significantly, we observed a nonvolatile, reversible in situ photoluminescence (PL) modulation of Mn2+ in this ferroelectric MHP film under an applied electric field, attributed to lattice distortion from ferroelectric polarization orientation. These findings enabled the development of a simple system comprising gallium nitride (GaN) light emitting diodes (LEDs) and ferroelectric films to implement multi-state signal encoding and a logic AND gate. This work advances the fabrication of efficient ferroelectric MHP films and highlights their potential for advanced optoelectronic applications.

DOI: 10.1038/s41377-025-01874-2

Source: https://www.nature.com/articles/s41377-025-01874-2