近日，德国德累斯顿莱布尼茨固体与材料研究所Agustín Bou团队研究了用于神经形态应用的多核纳米流体忆阻器的弛豫时间。该项研究成果发表在2025年5月11日出版的《美国化学会志》上。

忆阻器一直处于进行神经形态计算的最前沿。其可调电导特性能够模拟突触行为。由多极膜制成的纳米流体忆阻器已经显示出其忆阻特性，是液体神经形态系统的候选器件。这些特性可以通过电流-电压扫描中的电感磁滞来观察，然后通过阻抗光谱测量中的电感特性来证实。 忆阻器的动态行为在很大程度上取决于电压依赖的弛豫时间。

研究组通过多极纳米流体忆阻器的阻抗谱获得其动力学弛豫时间，对其进行建模，并推导出该时间的一般方程，该方程是施加电压的函数，与系统的内部参数完全相关。他们证明忆阻器的这一特性的行为与自然神经系统的行为相当。因此，研究组通过寻找具有相同动力学时间的忆阻器，开辟了一种研究神经元特征模拟的方法。

附：英文原文

Title: Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications

Author: Gonzalo Rivera-Sierra, Patricio Ramirez, Juan Bisquert, Agustín Bou

Issue&Volume: May 11, 2025

Abstract: Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tunable conductance properties enable the imitation of synaptic behavior. Nanofluidic memristors made of multipore membranes have shown their memristic properties and are candidate devices for liquid neuromorphic systems. Such properties are visible through an inductive hysteresis in the current–voltage sweeps, which is then confirmed by the inductive characteristics in impedance spectroscopy measurements. The dynamic behavior of memristors is largely determined by a voltage-dependent relaxation time. Here, we obtain the kinetic relaxation time of a multipore nanofluidic memristor via its impedance spectra, modeling it and deriving a general equation for this time as a function of the applied voltage, fully correlated with the system’s internal parameters. We show that the behavior of this characteristic of memristors is comparable to that of natural neural systems. Hence, we open a way to study the mimic of neuron characteristics by searching for memristors with the same kinetic times.

DOI: 10.1021/jacs.5c04903

Source: https://pubs.acs.org/doi/full/10.1021/jacs.5c04903