近日，复旦大学周鹏团队通过2D增强热载流子注入实现了亚纳秒闪存。2025年4月16日出版的《自然》杂志发表了这项成果。

追求编程速度低于1纳秒、超出非易失性闪存和高速易失性静态随机存取存储器能力的非易失存储器，仍然是存储技术领域的一个长期挑战。利用先进材料实现的基础物理创新，人们正在开发一系列新兴存储器，以克服非易失性存储器的速度瓶颈。作为应用最广泛的非易失性存储器，闪存的速度受到电场辅助程序效率低的限制，据报道，其速度远低于亚纳秒。

研究组报告了一种基于二维增强热载流子注入机制的二维狄拉克石墨烯通道闪存，支持电子和空穴注入。狄拉克通道闪存显示了400皮秒的程序速度、非易失性存储和5.5×10⁶次循环的强大耐久性。该结果证实，薄体沟道可以优化水平电场（Ey）分布，改进的Ey辅助编程效率在|V_DS|=3.7V时将注入电流提高到60.4 pA μm^-1。他们还发现，二维半导体二硒化钨具有二维增强的热空穴注入，但注入行为不同。这项工作表明，在相同的通道长度下，非易失性闪存的速度可以超过最快的易失性静态随机存取存储器。

附：英文原文

Title: Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection

Author: Xiang, Yutong, Wang, Chong, Liu, Chunsen, Wang, Tanjun, Jiang, Yongbo, Wang, Yang, Wang, Shuiyuan, Zhou, Peng

Issue&Volume: 2025-04-16

Abstract: The pursuit of non-volatile memory with program speeds below one nanosecond, beyond the capabilities of non-volatile flash and high-speed volatile static random-access memory, remains a longstanding challenge in the field of memory technology1. Utilizing fundamental physics innovation enabled by advanced materials, series of emerging memories2,3,4,5 are being developed to overcome the speed bottleneck of non-volatile memory. As the most extensively applied non-volatile memory, the speed of flash is limited by the low efficiency of the electric-field-assisted program, with reported speeds6,7,8,9,10 much slower than sub-one nanosecond. Here we report a two-dimensional Dirac graphene-channel flash memory based on a two-dimensional-enhanced hot-carrier-injection mechanism, supporting both electron and hole injection. The Dirac channel flash shows a program speed of 400picoseconds, non-volatile storage and robust endurance over 5.5×106cycles. Our results confirm that the thin-body channel can optimize the horizontal electric-field (Ey) distribution, and the improved Ey-assisted program efficiency increases the injection current to 60.4pAμm1 at |VDS|=3.7V. We also find that the two-dimensional semiconductor tungsten diselenide has two-dimensional-enhanced hot-hole injection, but with different injection behaviour. This work demonstrates that the speed of non-volatile flash memory can exceed that of the fastest volatile static random-access memory with the same channel length.

DOI: 10.1038/s41586-025-08839-w

Source: https://www.nature.com/articles/s41586-025-08839-w