上海交通大学史志文团队研究了均手性碳纳米管范德华晶体。该项研究成果发表在2025年3月13日出版的《科学》杂志上。
对于单壁碳纳米管（SWNT）在集成电路中的应用，拥有排列良好且纯半导体的高管密度SWNT阵列至关重要。在这项工作中，研究组报告了六方氮化硼（hBN）基板上紧密堆积单壁碳纳米管阵列的直接生长，证明了每个阵列内的高度对准和均匀手性。
分子动力学模拟表明，自组装生长机制是由管间范德华引力和单壁碳纳米管在原子平面hBN基底上的超低滑动摩擦引起的。由生长的单壁碳纳米管阵列构建的场效应晶体管在室温下表现出高性能，迁移率高达每秒2000平方厘米/伏，开/关比约为107，最大电流密度约为每微米6毫安。
附：英文原文
Title: Homochiral carbon nanotube van der Waals crystals
Author: Zhichun Zhang, Yi Chen, Peiyue Shen, Jiajun Chen, Sen Wang, Bo Wang, Saiqun Ma, Bosai Lyu, Xianliang Zhou, Shuo Lou, Zhenghan Wu, Yufeng Xie, Chengjia Zhang, Liguo Wang, Kunqi Xu, Haonan Li, Guohua Wang, Kenji Watanabe, Takashi Taniguchi, Dong Qian, Jinfeng Jia, Qi Liang, Xiaoqun Wang, Wei Yang, Guangyu Zhang, Chuanhong Jin, Wengen Ouyang, Zhiwen Shi
Issue&Volume: 2025-03-13
Abstract: For applications of single-walled carbon nanotubes (SWNTs) in integrated circuits, it is crucial to have high–tube density arrays of SWNTs that are well aligned and purely semiconducting. In this work, we report on the direct growth of close-packed SWNT arrays on hexagonal boron nitride (hBN) substrates, demonstrating high alignment and uniform chirality within each array. Molecular dynamics simulations suggest that a self-assembly growth mechanism resulted from the intertube van der Waals attraction and the ultralow sliding friction of SWNTs on the atomically flat hBN substrate. Field-effect transistors constructed from the grown SWNT array exhibit high performance at room temperature, with mobilities of up to 2000 square centimeters per volt per second, on/off ratios of ~107, and a maximum current density of ~6milliamperes per micrometer.
DOI: adu1756
Source: https://www.science.org/doi/10.1126/science.adu1756