近日，华东师范大学程亚团队研究了低损耗晶圆级铌酸锂集成光子学的高速飞秒激光光刻技术。这一研究成果于2025年12月11日发表在《中国科学：物理学 力学 天文学》杂志上。

光刻辅助化学机械刻蚀技术，作为在薄膜铌酸锂平台上制备高质量（高Q值）、大规模光子集成电路的专用制造方法，为实现从高Q值微腔到波导放大器、可编程光子电路等多样化光子器件提供了可能。

为推进薄膜铌酸锂光子集成电路的高通量制造，研究组开发了一种采用高重复频率飞秒激光与高速多边形扫描仪的激光光刻技术，实现了2.4 cm²/h的光刻吞吐量以及低于0.1 dB/cm的光传播损耗。通过展示晶圆级加工的薄膜铌酸锂光子器件，进一步验证了该技术平台的规模化生产能力与性能表现。

附：英文原文

Title: High-speed femtosecond laser lithography for low-loss wafer-scale lithium niobate integrated photonics

Author: Huang, Weimin, Chen, Jinming, Song, Lvbin, Liu, Zhaoxiang, Yu, Jianping, Song, Yunpeng, Wang, Min, Cheng, Ya

Issue&Volume: 2025-12-11

Abstract: Photolithography-assisted chemo-mechanical etching (PLACE), a dedicated fabrication methodology for high-quality (high-Q) large-scale photonic integrated circuits (PICs) on thin-film lithium niobate (TFLN), has enabled the realization of diverse PICs spanning from high-Q micro-resonators to waveguide amplifiers and programmable photonic circuits. To advance high-throughput TFLN PICs manufacturing, we developed a laser lithography technique employing a high repetition-rate femtosecond laser and a high-speed polygon scanner, achieving a lithography throughput of 2.4 cm2/h and optical propagation loss below 0.1 dB/cm. System capabilities are further evidenced by the demonstration of wafer-scale fabricated TFLN photonic devices, confirming the scalability and performance of this lithographic platform.

DOI: 10.1007/s11433-025-2849-6

Source: https://link.springer.com/article/10.1007/s11433-025-2849-6