北京大学彭海琳团队报道了可转移高κ介电介质和二维半导体的外延集成。相关研究成果发表在2024年7月22日出版的《美国化学会杂志》。

高介电常数（高κ）介电材料的合成及其与沟道材料的集成一直是最先进晶体管架构中的关键挑战，因为它们可以提供强大的栅极控制和低工作电压。对于下一代电子产品，人们正在探索具有悬空无键表面和原子厚厚度的高迁移率二维（2D）分层半导体作为沟道材料，以实现更短的沟道长度和更少的界面散射。如今，高κ电介质与高迁移率2D半导体的集成主要依赖于原子层沉积或转移堆叠，这可能会导致一些不良问题，如沟道损伤和界面陷阱。

该文中，研究人员展示了通过直接外延生长将高迁移率2D半导体Bi₂O₂Se与可转移的高κSrTiO₃集成为2D场效应晶体管。值得注意的是，这种2D异质结构可以有效地从水溶性Sr₃Al₂O₆牺牲层转移到任意基板上。所制备的2D Bi₂O₂Se/SrTiO₃晶体管的开/关比超过104，亚阈值摆动降至90 mV/dec。此外，2D Bi₂O₂Se/SrTiO₃异质结构可以很容易地转移到柔性聚对苯二甲酸乙二醇酯（PET）基板上，所制备晶体管在柔性电子产品中表现出良好的潜力。

该研究为高κ电介质与高迁移率2D半导体的集成开辟了一条新途径，并为探索多功能电子器件铺平了道路。

附：英文原文

Title: Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor

Author: Xuzhong Cong, Xiaoyin Gao, Haoying Sun, Xuehan Zhou, Yongchao Zhu, Xin Gao, Congwei Tan, Jingyue Wang, Leyan Nian, Yuefeng Nie, Hailin Peng

Issue&Volume: July 22, 2024

Abstract: The synthesis of high-dielectric-constant (high-κ) dielectric materials and their integration with channel materials have been the key challenges in the state-of-the-art transistor architecture, as they can provide strong gate control and low operating voltage. For next-generation electronics, high-mobility two-dimensional (2D) layered semiconductors with dangling-bond-free surfaces and an atomic-thick thickness are being explored as channel materials to achieve shorter channel lengths and less interfacial scattering. Nowadays, the integration of high-κ dielectrics with high-mobility 2D semiconductors mainly relies on atomic layer deposition or transfer stacking, which may cause several undesirable problems, such as channel damage and interface traps. Here, we demonstrate the integration of high-mobility 2D semiconducting Bi2O2Se with transferable high-κ SrTiO3 as a 2D field-effect transistor by direct epitaxial growth. Remarkably, such 2D heterostructures can be efficiently transferred from the water-soluble Sr3Al2O6 sacrificial layer onto arbitrary substrates. The as-fabricated 2D Bi2O2Se/SrTiO3 transistors exhibit an on/off ratio over 104 and a subthreshold swing down to 90 mV/dec. Furthermore, the 2D Bi2O2Se/SrTiO3 heterostructures can be easily transferred onto flexible polyethylene terephthalate (PET) substrates, and the as-fabricated transistors exhibit good potential in flexible electronics. Our study opens up a new avenue for the integration of high-κ dielectrics with high-mobility 2D semiconductors and paves the way for the exploration of multifunctional electronic devices.

DOI: 10.1021/jacs.4c04984

Source: https://pubs.acs.org/doi/abs/10.1021/jacs.4c04984