近日，松山湖材料实验室的梅增霞及其研究小组与辽宁大学的王绩伟等人合作并取得一项新进展。经过不懈努力，他们研制出低压IGZO场效应紫外光电二极管。相关研究成果已于2024年6月20日在国际知名学术期刊《中国物理快报》上发表。

在这项研究中，研究人员提出了一种极低压场效应紫外光电探测器（UV PD），该探测器采用了栅漏短路非晶IGZO（a-IGZO）薄膜晶体管（TFT）结构。通过结合实验测量和工艺计算机辅助设计（TCAD）仿真研究，他们发现场效应二极管（FED）的反向电流（IR）与母体TFT的阈值电压（Vth）密切相关，这表明增强模式TFT更适合用于制造具有低暗电流的场效应紫外光电探测器。

在-0.1V的低偏置电压驱动下，该探测器展现出了出色的紫外响应性能，包括高紫外/可见光（R300/R550）抑制比（1.9×10³）、低暗电流（1.15×10^-12A）以及高光暗电流比（PDCR，约10³）和高响应率（1.89A/W）。这种场效应光电二极管为在低偏置条件下构建光响应性能平衡的紫外光二极管提供了一个新的平台，对于设计高效能的大规模智能传感器网络具有极大的吸引力。

据悉，在物联网（IoT）时代，鉴于环境消毒、火灾报警、电晕放电监测等众多应用场景的需求，节能的紫外线（UV）光电探测器（PD）显得尤为重要。然而，目前市场上常见的自供电UV PD主要依赖于金属-半导体异质结构或p-n异质结，但这些结构中的内置电场有限，限制了其光响应性的进一步提升。

附：英文原文

Title: Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

Author:Shuang Song^1,3, Huili Liang^1,2*, Wenxing Huo⁴, Guang Zhang⁵, Yonghui Zhang⁶, Jiwei Wang³, and Zengxia Mei^1,2*

Issue&Volume: 2024-06-20

Abstract: In the era of Internet of Things (IoTs), an energy-efficient ultraviolet (UV) photodetector (PD) is highly desirable considering the massive usage scenarios such as environmental sterilization, fire alarm and corona discharge monitoring. So far, common self-powered UV PDs are mainly based on metal-semiconductor hetero-structures or p–n heterojunctions, where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity. In this work, an extremely low-voltage field-effect UV PD is proposed using a gate-drain shorted amorphous IGZO (a-IGZO) thin film transistor (TFT) architecture. A combined investigation of the experimental measurements and technology computer-aided design (TCAD) simulations suggests that the reverse current (I_R) of field-effect diode (FED) is highly related with the threshold voltage (V_th) of the parental TFT, implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current. Driven by a low bias of -0.1V, decent UV response has been realized including large UV/visible (R₃₀₀/R₅₅₀) rejection ratio (1.9×10³), low dark current (1.15×10^-12A) as well as high photo-to-dark current ratio (PDCR, ～10³) and responsivity (1.89A/W). This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias, which is attractive for designs of large-scale smart sensor networks with high energy efficiency.

DOI: 10.1088/0256-307X/41/6/068501

Source: https://cpl.iphy.ac.cn/10.1088/0256-307X/41/6/068501