近日，上海交通大学的史志文及其研究团队与以色列特拉维夫大学的Michael Urbakh以及武汉大学的欧阳稳根等人合作并取得一项新进展。经过不懈努力，他们研制出用于高性能电子器件hBN堆叠中生长的石墨烯纳米带。相关研究成果已于2024年3月27日在国际权威学术期刊《自然》上发表。

该研究团队报道了高质量石墨烯纳米带(GNRs)在hBN堆叠中的无转移直接生长。生长的嵌入式GNRs具有超长(高达0.25mm)、超窄(<5nm)和具有之字形边缘的同手性等非常理想的特性。通过原子模拟，研究团队揭示了嵌入生长的机制，这涉及到在AA'堆叠的hBN层之间滑动时GNR的超低摩擦。

利用这种生长结构，研究人员进一步展示了嵌入式GNR场效应器件的无转移制造过程。该器件在室温下表现出卓越的性能，迁移率高达4,600cm²V^–1s^–1，开关比也高达10⁶。这为基于嵌入式层状材料的高性能电子器件的自下而上制造铺平了道路。

据悉，二维材料在六方氮化硼(hBN)堆叠中的范德华封装，是一种很有前途的制造超高性能电子器件的方法。然而，实现范德华封装的当代方法涉及使用机械转移技术的人工层堆叠，难以控制，容易污染且不可扩展。

附：英文原文

Title: Graphene nanoribbons grown in hBN stacks for high-performance electronics

Author: Lyu, Bosai, Chen, Jiajun, Wang, Sen, Lou, Shuo, Shen, Peiyue, Xie, Jingxu, Qiu, Lu, Mitchell, Izaac, Li, Can, Hu, Cheng, Zhou, Xianliang, Watanabe, Kenji, Taniguchi, Takashi, Wang, Xiaoqun, Jia, Jinfeng, Liang, Qi, Chen, Guorui, Li, Tingxin, Wang, Shiyong, Ouyang, Wengen, Hod, Oded, Ding, Feng, Urbakh, Michael, Shi, Zhiwen

Issue&Volume: 2024-03-27

Abstract: Van der Waals encapsulation of two-dimensional materials in hexagonal boron nitride (hBN) stacks is a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination and unscalable. Here we report the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) in hBN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25mm), ultranarrow (<5nm) and homochiral with zigzag edges. Our atomistic simulations show that the mechanism underlying the embedded growth involves ultralow GNR friction when sliding between AA′-stacked hBN layers. Using the grown structures, we demonstrate the transfer-free fabrication of embedded GNR field-effect devices that exhibit excellent performance at room temperature with mobilities of up to 4,600cm²V^–1s^–1 and on–off ratios of up to 10⁶. This paves the way for the bottom-up fabrication of high-performance electronic devices based on embedded layered materials.

DOI: 10.1038/s41586-024-07243-0

Source: https://www.nature.com/articles/s41586-024-07243-0