近日，
该研究团队展示了如何通过使用扫描隧道显微镜（STM），在扭曲双层二硒化钨（tWSe2）中引入一维（1D）边界，该边界将具有不同扭曲角的两个区域分隔开，并证明了可以选择性填充沿边界的1D莫尔位点的电子态。通过将背栅电压与STM偏置电压相结合，可以直接成像和操控1D莫尔链中相关莫尔电子的强局域电荷态。这项研究结果为在二维系统中，实现1D莫尔链的新型相关电子态打开了大门。
据悉，基于扭曲双层石墨烯和过渡金属二硫化物的二维（2D）莫尔系统，为研究部分填充平带中强电子-电子相互作用驱动的涌现现象提供了一个有前景的平台。于是，一个自然的问题产生了：是否有可能将2D相关莫尔物理扩展到一维（1D），在那里电子-电子关联性有望进一步增强？这需要对1D莫尔链进行选择性掺杂，而这似乎超出了当今技术的掌握范围。因此，尚未出现具有部分填充电子态的1D莫尔链的实验演示。
附：英文原文
Title: Realizing one-dimensional moiré chains with strong electron localization in two-dimensional twisted bilayer WSe2
Author: Ren, Ya-Ning, Ren, Hui-Ying, Watanabe, Kenji, Taniguchi, Takashi, He, Lin
Issue&Volume: 2024-10-30
Abstract: Two-dimensional (2D) moiré systems based on twisted bilayer graphene and transition metal dichalcogenides provide a promising platform to investigate emergent phenomena driven by strong electron–electron interactions in partially filled flat bands. A natural question arises: Is it possible to expand the 2D correlated moiré physics to one-dimensional (1D) that electron–electron correlation is expected to be further enhanced This requires selectively doping of 1D moiré chain, which seems to be not within the grasp of today’s technology. Therefore, an experimental demonstration of the 1D moiré chain with partially filled electronic states remains absent. Here, we show that we can introduce 1D boundaries, separating two regions with different twist angles, in twisted bilayer WSe2 (tWSe2) by using scanning tunneling microscopy (STM) and demonstrate that the electronic states of 1D moiré sites along the boundaries can be selectively filled. The strong localized charge states of correlated moiré electrons in the 1D moiré chain can be directly imaged and manipulated by combining a back-gate voltage with the STM bias voltage. Our results open the door for realizing new correlated electronic states of the 1D moiré chain in 2D systems.
DOI: 10.1073/pnas.2405582121
Source: https://www.pnas.org/doi/abs/10.1073/pnas.2405582121