近日，南京大学的何亮及其研究团队取得一项新进展。经过不懈努力，他们通过分子束外延技术成功制备厘米级尺寸、室温以上铁磁性Fe₃GaTe₂薄膜。相关研究成果已于2024年10月18日在国际知名学术期刊《中国物理快报》上发表。

Fe₃GaTe₂作为一种层状铁磁性材料，其居里温度（T_c）高于室温，是下一代自旋电子器件的关键材料。

为了在实际器件中应用，需要制备大尺寸、高质量的Fe₃GaTe₂薄膜。本研究采用分子束外延技术，成功制备了厘米级尺寸、具有高晶体质量和室温以上铁磁性以及强垂直磁各向异性的薄膜样品。

此外，样品的居里温度随薄膜厚度的增加而升高，当薄膜厚度达到60纳米时，居里温度可达367开尔文。该研究为新一代范德华自旋电子器件提供了材料基础，并为Fe₃GaTe₂的商业化应用铺平了道路。

附：英文原文

Title: Centimeter-Scale Above-Room-Temperature Ferromagnetic Fe₃GaTe₂ Thin Films by Molecular Beam Epitaxy

Author:Taikun Wang^1,2†, Yongkang Xu^1,2†, Yu Liu^1,2, Xingze Dai^1,2, Pengfei Yan^1,2, Jin Wang^1,2, Shuanghai Wang^1,2, Yafeng Deng^1,2, Kun He^1,2, Caitao Li^1,2, Ziang Wang¹, Wenqin Zou³, Rongji Wen⁴, Yufeng Hao⁴, and Liang He^1,2*

Issue&Volume: 2024-10-18

Abstract: Fe₃GaTe₂, as a layered ferromagnetic material, has a Curie temperature (T_c) higher than room temperature, making it the key material in next-generation spintronic devices. To be used in practical devices, large-sized high-quality Fe₃GaTe₂ thin films need to be prepared. Here, the centimeter-scale thin film samples with high crystal quality and above-room-temperature ferromagnetism with strong perpendicular magnetic anisotropy were prepared by molecular beam epitaxy technology. Furthermore, the T_c of the samples raises as the film thickness increases, and reaches 367K when the film thickness is 60nm. This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe₃GaTe₂.

DOI: 10.1088/0256-307X/41/10/107502

Source: https://cpl.iphy.ac.cn/10.1088/0256-307X/41/10/107502