北京大学彭海琳团队报道了集成外延高k栅氧化物的2D鳍状场效应晶体管。相关研究成果发表在2023年3月22日出版的《自然》。

将二维（2D）半导体和高介电常数（k）栅极氧化物精确集成到三维（3D）垂直结构阵列中，有望开发超规模晶体管，但事实证明具有挑战性。

该文中，研究人员报道了2D鳍状氧化物异质结构的垂直排列阵列的外延合成，这是一类新的3D架构，其中高迁移率2D半导体鳍状Bi₂O₂Se和单晶高k栅极氧化物Bi₂SeO₅外延集成。这些2D鳍状氧化物外延异质结构具有原子级平坦的界面和超薄的鳍状物厚度，厚度低至一个晶胞（1.2nm），实现了单晶阵列的晶圆级、特定位置和高密度生长。

基于Bi₂O₂Se/Bi₂SeO₅外延异质结构的2D鳍式场效应晶体管（FinFET）在400nm沟道长度下表现出高达270cm²V^-1s^-1的高电子迁移率（μ）、低至约1pAμm^-1的超低关断电流（IOFF）、高达10⁸的高通/关断电流比（ION/IOFF）和高达830μAμm^-1的高通电流（ION），其满足国际设备和系统路线图（IRDS）6所规定的低功率规范。2D鳍状氧化物外延异质结构为摩尔定律的进一步扩展开辟了新的途径。

附：英文原文

Title: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide

Author: Tan, Congwei, Yu, Mengshi, Tang, Junchuan, Gao, Xiaoyin, Yin, Yuling, Zhang, Yichi, Wang, Jingyue, Gao, Xinyu, Zhang, Congcong, Zhou, Xuehan, Zheng, Liming, Liu, Hongtao, Jiang, Kaili, Ding, Feng, Peng, Hailin

Issue&Volume: 2023-03-22

Abstract: Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k) gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for developing ultrascaled transistors1,2,3,4,5, but has proved challenging. Here we report the epitaxial synthesis of vertically aligned arrays of 2D fin-oxide heterostructures, a new class of 3D architecture in which high-mobility 2D semiconductor fin Bi2O2Se and single-crystal high-k gate oxide Bi2SeO5 are epitaxially integrated. These 2D fin-oxide epitaxial heterostructures have atomically flat interfaces and ultrathin fin thickness down to one unit cell (1.2nm), achieving wafer-scale, site-specific and high-density growth of mono-oriented arrays. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (μ) up to 270cm2V1s1, ultralow off-state current (IOFF) down to about 1pAμm1, high on/off current ratios (ION/IOFF) up to 108 and high on-state current (ION) up to 830μAμm1 at 400-nm channel length, which meet the low-power specifications projected by the International Roadmap for Devices and Systems (IRDS)6. The 2D fin-oxide epitaxial heterostructures open up new avenues for the further extension of Moore’s law.

DOI: 10.1038/s41586-023-05797-z

Source: https://www.nature.com/articles/s41586-023-05797-z