西班牙瓦伦西亚大学Coronado, Eugenio团队报道了热或光诱导自旋开关驱动应变可调异质结构中固定在MoS₂层上的自旋交叉纳米粒子。相关研究成果于2021年10月7日发表在国际顶尖学术期刊《自然—化学》。

在过去的几年中，应变对MoS₂层的光学和电子特性的影响引起了特别的关注，因为它可以改善光电和自旋电子器件的性能。虽然已经探索了几种方法，但应变通常施加在二维材料外部。

该文中，研究人员描述了一种可逆的“自应变”系统的制备，其中应变由MoS₂基复合材料的一种组分在分子水平上产生。将自旋交叉纳米颗粒共价接枝到半导体MoS₂的功能化层上，形成杂化异质结构。它们在施加外部刺激（光照或温度变化）时在两种自旋状态之间切换的能力可在MoS₂层上产生应变。该自旋交叉伴随着体积变化，产生的应变导致异质结构的电学和光学性质发生实质性的可逆变化。

附：英文原文

Title: Spin-crossover nanoparticles anchored on MoS2 layers for heterostructures with tunable strain driven by thermal or light-induced spin switching

Author: Torres-Cavanillas, Ramn, Morant-Giner, Marc, Escorcia-Ariza, Garin, Dugay, Julien, Canet-Ferrer, Josep, Tatay, Sergio, Cardona-Serra, Salvador, Gimnez-Marqus, Mnica, Galbiati, Marta, Forment-Aliaga, Alicia, Coronado, Eugenio

Issue&Volume: 2021-10-07

Abstract: In the past few years, the effect of strain on the optical and electronic properties of MoS2 layers has attracted particular attention as it can improve the performance of optoelectronic and spintronic devices. Although several approaches have been explored, strain is typically externally applied on the two-dimensional material. In this work, we describe the preparation of a reversible ‘self-strainable’ system in which the strain is generated at the molecular level by one component of a MoS2-based composite material. Spin-crossover nanoparticles were covalently grafted onto functionalized layers of semiconducting MoS2 to form a hybrid heterostructure. Their ability to switch between two spin states on applying an external stimulus (light irradiation or temperature change) serves to generate strain over the MoS2 layer. A volume change accompanies this spin crossover, and the created strain induces a substantial and reversible change of the electrical and optical properties of the heterostructure.

DOI: 10.1038/s41557-021-00795-y

Source: https://www.nature.com/articles/s41557-021-00795-y