美国国家可再生能源实验室Zhu, Kai团队报道了连接钙钛矿太阳能电池的实验室和现场寿命的方法。相关研究成果于2023年9月11日发表在《自然》。

金属卤化物钙钛矿太阳能电池（PSCs）代表了一种有前途的低成本薄膜光伏（PV）技术，在单结和串联应用中都获得了前所未有的功率转换效率（PCE）。为了推动PSCs的商业化，尽管具有挑战性，了解在现实户外条件下设备的可靠性是至关重要的，因为在这种条件下，多种应力因素（如光、热、湿度）共存，产生复杂的降解行为。有必要确定加速室内测试协议，以快速指导PSC的开发，该协议可以将特定的压力源与现场设备中观察到的退化模式相关联。

该文中，研究人员使用最先进的p-i-n PSC堆栈（PCE高达~25.5%）来表明室内加速稳定性测试可以预测6个月的室外老化测试。照明和高温下的设备退化率对于理解户外设备的可靠性最具指导意义。研究还发现，基于铟锡氧化物（ITO）/自组装单层（SAM）的空穴传输层（HTL）/钙钛矿界面对该器件操作稳定性的影响最大。改善SAM HTL的离子阻断性能将器件在50°C–85°C下的平均运行稳定性提高了约2.8倍，在85°C时达到1000小时以上，在50°C时达到约8200小时，预计降解率为20%，这是迄今为止高效p-i-n PSCs的最佳性能之一。

附：英文原文

Title: Towards linking lab and field lifetimes of perovskite solar cells

Author: Jiang, Qi, Tirawat, Robert, Kerner, Ross A., Gaulding, E. Ashley, Xian, Yeming, Wang, Xiaoming, Newkirk, Jimmy M., Yan, Yanfa, Berry, Joseph J., Zhu, Kai

Issue&Volume: 2023-09-11

Abstract: Metal halide perovskite solar cells (PSCs) represent a promising low-cost, thin-film photovoltaic (PV) technology, with unprecedented power conversion efficiencies (PCEs) obtained for both single-junction and tandem applications1-8. To push PSCs toward commercialization, it is critical, albeit challenging, to understand device reliability under real-world outdoor conditions where multiple stress factors (e.g., light, heat, humidity) coexist, generating complicated degradation behaviors9-13. It is necessary to identify accelerated indoor testing protocols—which can correlate specific stressors with observed degradation modes in fielded devices—to quickly guide PSC development. Here, we use a state-of-the-art p-i-n PSC stack (with PCE up to ~25.5%) to show that indoor accelerated stability tests can predict our 6-month outdoor aging tests. Device degradation rates under illumination and at elevated temperatures are most instructive for understanding outdoor device reliability. We also find that the indium tin oxide (ITO)/self-assembled monolayer (SAM)-based hole transport layer (HTL)/perovskite interface most strongly affects our device operation stability. Improving the ion-blocking properties of the SAM HTL increases averaged device operational stability at 50°C–85°C by a factor of ~2.8, reaching over 1000 h at 85°C and to near 8200 h at 50°C with a projected 20% degradation, which is among the best to date for high-efficiency p-i-n PSCs14-17.

DOI: 10.1038/s41586-023-06610-7

Source: https://www.nature.com/articles/s41586-023-06610-7