厦门大学龙腊生团队实现了基于[(n-C3H7)4N][FeIIIFeII(dto)3] (dto = C2O2S2)电子铁电薄膜的室温磁电耦合。 相关研究成果于2021年4月13日发表于国际一流学术期刊《美国化学会杂志》。

多铁性薄膜的磁电耦合在新一代器件中有着极其实际的应用，因而受到了人们的高度重视。

该文中，研究人员使用简单的冲压工艺制备了[（n-C3H7）4N][FeIIFeII（dto）3]（1；dto=C2O2S2）膜。实验结果表明，在50～300K的宽温度范围内，FeII和FeII位之间的电子跃迁产生了面内铁电性。对化合物[（n-C3H7）4N][FeIIIZnII（dto）3]（2；dto=C2O2S2）的铁电观察进一步证实了这一机理，其中FeII离子被非磁性金属ZnII离子取代，没有明显的铁电极化。然而，铁电性和磁性都与磁性铁离子有关，这意味着在1中存在强磁电耦合。通过压电力显微镜(PFM），在面内磁场作用下通过操纵铁电畴观察到了磁电耦合效应。

研究工作不仅为分子基电子铁电/磁电材料的设计提供了新的思路，而且为新一代电子器件的实际应用铺平了道路。

附：英文原文

Title: Room-Temperature Magnetoelectric Coupling in Electronic Ferroelectric Film based on [(n-C3H7)4N][FeIIIFeII(dto)3] (dto = C2O2S2)

Author: Xiaolin Liu, Bin Wang, Xiaofeng Huang, Xinwei Dong, Yanping Ren, Haixia Zhao, Lasheng Long, Lansun Zheng

Issue&Volume: April 13, 2021

Abstract: Great importance has been attached to magnetoelectric coupling in multiferroic thin films owing to their extremely practical use in a new generation of devices. Here, a film of [(n-C3H7)4N][FeIIIFeII(dto)3] (1; dto = C2O2S2) was fabricated using a simple stamping process. As was revealed by our experimental results, in-plane ferroelectricity over a wide temperature range from 50 to 300 K was induced by electron hopping between FeII and FeIII sites. This mechanism was further confirmed by the ferroelectric observation of the compound [(n-C3H7)4N][FeIIIZnII(dto)3] (2; dto = C2O2S2), in which FeII ions were replaced by nonmagnetic metal ZnII ions, resulting in no obvious ferroelectric polarization. However, both ferroelectricity and magnetism are related to the magnetic Fe ions, implying a strong magnetoelectric coupling in 1. Through piezoresponse force microscopy (PFM), the observation of magnetoelectric coupling was achieved by manipulating ferroelectric domains under an in-plane magnetic field. The present work not only provides new insight into the design of molecular-based electronic ferroelectric/magnetoelectric materials but also paves the way for practical applications in a new generation of electronic devices.

DOI: 10.1021/jacs.1c00601

Source: https://pubs.acs.org/doi/10.1021/jacs.1c00601